Dual-frequency sweeping light source based on four-wave mixing in silicon-on-insulator nano-waveguide

Four-wave mixing (FWM) is a well-known technique to achieve all-optical control wavelength conversion. We propose a well-designed silicon nano-waveguide based on silicon-on-insulator (SOI) to achieve FWM conversion. Particularly, the original signal light continuously sweeps along the C band, and the generated idler light is correspondingly sweeping as the original signal is swept. The wavelengths of the idler and signal lights are symmetric with respect to the pump light wavelength. Simulation and experimental results of the FWM conversion properties are well-matched. With the pump light filtered out, a dual-frequency continuously sweeping laser source is achieved, which could be applied in dual-frequency scanning interferometry to eliminate dynamic errors in practical use

Performance evaluation of on-chip wavelength conversion based on InP/In1−x_{1-x}Gax_xAsy_yP1−y_{1-y} semiconductor waveguide platforms

We propose and design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and report the results of effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved for fixing pump power 100 mW. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. It is indicated the excellent optical properties of the InP/In1-xGaxAsyP1-y waveguides and pave the way towards direct integration telecom band devices on stand semiconductor platforms.Comment: 21 page